NGD15N41A: Ignition IGBT, 15 A, 410 V

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

特性
  • DPAK Package Offers Smaller Footprint and Increased Board Space
  • Gate-Emitter ESD Protection
  • Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
  • Integrated ESD Diode Protection
  • New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
  • Short-Circuit Withstand Capability
  • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
  • Low Saturation Voltage
  • High Pulsed Current Capability
  • Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
应用
  • Ignition Systems Coil-on-Plug
终端产品
  • Automotive
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Ignition IGBT, N-Channel, 15 A, 410 V, DPAKNGD15N41CL/D (141.0kB)8
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (SINGLE GAUGE) TO-252369C (59.1kB)E
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NGD15N41ACLT4GActiveAEC Qualified PPAP Capable Pb-free Halide freeIgnition IGBT, 15 A, 410 VDPAK-3369C1Tape and Reel2500$0.6667
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (us)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGD15N41ACLT4G410151.9250107No
Ignition IGBT, N-Channel, 15 A, 410 V, DPAK NGD15N41A
DPAK (SINGLE GAUGE) TO-252 NCV8408