NGTB15N120IH: IGBT, 15 A, 1200V in TO247

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

特性
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • This is a Pb−Free Device
应用
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBTNGTB15N120IHW/D (121kB)P0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB15N120IHWGActivePb-free Halide freeTO-247340ALNATube30$1.6
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB15N120IHWG1200152.120.36120278
IGBT (121kB) NGTB15N120IH
TO-247 NGTG40N120FL2