NGTB15N60S1: IGBT/w Diode 600V 15A NPT

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.

特性
  • Low Saturation Voltage Resulting in Low Conduction Loss
  • Low Switching Loss in Higher Frequency Applications
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability
  • Excellent Current versus Package Size Performance Density
  • AC and DC Motor Control
应用
  • Appliance Motor Control
  • General Purpose Inverter
终端产品
  • White Goods
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
ON Semiconductor's Motor Control IGBTs and Free-Wheeling DiodesAND9088/D (1143kB)3Aug, 2016
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Short-Circuit RatedNGTB15N60S1E/D (134kB)6
仿真模型 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Spice ModelSPICE MODEL (31.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB15N60S1EGActivePb-freeTO-220-3221A-091Tube50$0.45
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB15N60S1EG600151.51.650.350.552705885117Yes
IGBT - Short-Circuit Rated (134kB) NGTB15N60S1
ON Semiconductor's Motor Control IGBTs and Free-Wheeling Diodes NGTG15N60S1
Spice Model NTLUD3A260P
IGBT Applications Handbook NGTG50N60FWG
TO-220 3 LEAD STANDARD NTP6412AN