NGTB20N120IHS: IGBT 1200V 20A FS1 Induction Heating

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

特性
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss
优势
  • Low Conduction Loss
  • Reduces system Power Dissipation
应用
  • Induction Heating Consumer Appliances Soft Switching
终端产品
  • Rice Cooker Induction Cooktop
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
用于电磁炉应用的IGBTTND6026CN/D (12435.3kB)0Aug, 2012
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT 1200V 20A FS1 Induction HeatingNGTB20N120IHS/D (178.0kB)0
应用注释 (2)
Document TitleDocument ID/SizeRevisionRevision Date
High Performance IGBT for Induction Heating ApplicationsAND9056/D (78kB)1Oct, 2013
IGBT Power Losses in Induction Heating ApplicationsAND9054/D (197kB)1Nov, 2013
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NGTB20N120IHSWGActivePb-free Halide freeIGBT 1200V 20A FS1 Induction HeatingTO-247-3340L-02NATube30$0.95
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (us)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB20N120IHSWG1200202.11.550.65155156Yes
IGBT 1200V 20A FS1 Induction Heating NGTB20N120IHS
用于电磁炉应用的IGBT NGTB40N65IHL2
High Performance IGBT for Induction Heating Applications NGTB40N65IHL2
IGBT Power Losses in Induction Heating Applications NGTB40N65IHL2
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG50N60FWG