NGTB25N120FL2: IGBT 1200V 25A FS2 SOLAR/UPS

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

特性
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10 s Short Circuit Capability
  • These are Pb−Free Devices
应用
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
应用注释 (3)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT RuggednessAND9127/D (532kB)3Jan, 2016
Paralleling of IGBTsAND9100/D (1251kB)1Mar, 2014
Thermal Calculations for IGBTsAND9140/D (497kB)1Apr, 2014
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Field Stop IINGTB25N120FL2W/D (144kB)2Dec, 2016
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB25N120FL2WGActivePb-free Halide freeTO-247340ALNATube30$1.91
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB25N120FL2WG12002522.10.61.951541517810385Yes
IGBT - Field Stop II (144kB) NGTB25N120FL2
IGBT Ruggedness NGTG50N60FWG
Paralleling of IGBTs NGTG50N60FLWG
Thermal Calculations for IGBTs NGTG40N120FL2
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG40N120FL2