NGTB30N120L: IGBT 1200V 30A FS1 Gen Mkt

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

特性
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss
优势
  • Low Conduction Loss
  • Reduces system Power Dissipation
应用
  • Industrial Switching
终端产品
  • Inverter Welding Machines Industrial Motor Control
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340L-02 (57.4kB)F
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT 1200V 30A FS1 Gen MktNGTB30N120L/D (172.0kB)1
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NGTB30N120LWGActivePb-free Halide freeIGBT 1200V 30A FS1 Gen MktTO-247-3340L-02NATube30$2.31
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (us)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB30N120LWG1200301.751.514.44205260Yes
IGBT 1200V 30A FS1 Gen Mkt NGTB30N120L
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG50N60FWG