NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

特性
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss
优势
  • Low Conduction Loss
  • Reduces System Power Dissipation
应用
  • Half Bridge IH
终端产品
  • Inductive Heating Hobs
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
用于电磁炉应用的IGBTTND6026CN/D (12435.3kB)0Aug, 2012
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT 600V 30A FS1 Induction HeatingNGTB30N60IHLW/D (134kB)1Sep, 2016
应用注释 (2)
Document TitleDocument ID/SizeRevisionRevision Date
High Performance IGBT for Induction Heating ApplicationsAND9056/D (78kB)1Oct, 2013
IGBT Power Losses in Induction Heating ApplicationsAND9054/D (197kB)1Nov, 2013
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
参考手册 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT Applications HandbookHBD871/D (7014kB)3Apr, 2014
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB30N60IHLWGActivePb-free Halide freeTO-247340ALNATube30$1.62
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB30N60IHLWG600301.81.20.2840023130250Yes
IGBT 600V 30A FS1 Induction Heating (134kB) NGTB30N60IHLWG
用于电磁炉应用的IGBT NGTB40N65IHL2
High Performance IGBT for Induction Heating Applications NGTB40N65IHL2
IGBT Power Losses in Induction Heating Applications NGTB40N65IHL2
IGBT Applications Handbook NGTG50N60FWG
TO-247 NGTG40N120FL2