NGTB45N60S2: IGBT 600 V/45 A - Welding

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

特性
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 µs Short−Circuit Capability
应用
  • Inverter Welding
终端产品
  • Welder
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT - Inverter WeldingNGTB45N60S2W/D (80kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB45N60S2WGActivePb-free Halide freeTO-247340ALNATube30$1.58
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB45N60S2WG6004521.20.3649836135300Yes
IGBT - Inverter Welding (80kB) NGTB45N60S2
TO-247 NGTG40N120FL2