NGTB50N60S: IGBT 600V 50A Welding

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

特性
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode
应用
  • Inverter Welding
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBTNGTB50N60SW/D (136kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (56.2kB)A
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
NGTB50N60SWGActivePb-free Halide freeIGBT 600V 50A WeldingTO-247340ALNATube30$2.0
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (us)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB50N60SWG600502.21.20.637622135250Yes
IGBT NGTB50N60S
TO-247 NGTG40N120FL2