NGTB75N65FL2: IGBT 650V 75A FS2 Solar/UPS

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability
应用
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBTNGTB75N65FL2W/D (239kB)5Sep, 2016
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-247340AL (32.3kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB75N65FL2WGActivePb-free Halide freeTO-247340ALNATube30$3.6
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB75N65FL2WG650751.72.211.58083105595Yes
IGBT (239kB) NGTB75N65FL2
TO-247 NGTG40N120FL2