NGTG30N60FLWG: IGBT, PFC, High Frequency, 30 A, 600 V
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
特性- Low Saturation Voltage using Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Optimized for High Speed Switching
- 5µs Short Circuit Capability
| 优势- Reduces System Power Dissipation
|
参考手册 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTG30N60FLWG | Active | Pb-free
Halide free | TO-247-3 | 340L-02 | NA | Tube | 30 | $1.46 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTG30N60FLWG | 600 | 30 | 1.65 | | 0.28 | 0.7 | | | 170 | 5 | | 167 | No |
