NSR01F30MX: 30 V, 100 mA Low VF Schottky Diode

The NSR01F30MX Schottky barrier diode is optimized for low forward voltage applications. It is packaged in an ultra small x3DFN2 package that enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

特性
  • Very Low Forward Voltage Drop - 350 mV @ 10 mA
  • Low Reverse current - 5 uA @ 10 V
  • ESD Rating - Human Body Model: Class 3BESD Rating - Machine Model: Class C
  • Pb and Halide Free Device
  • 100 mA of Continuous Forward Current
优势
  • Higher Efficiency
  • Higher Efficiency
  • ESD Robust
  • Enviromentally Safe
应用
  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost DC-DC Converters
  • Reverse Voltage and Current Protection
  • Clamping and Protection
终端产品
  • Mobile Handsets
  • Wearables
  • MP3 Players
  • Digital Cameras and Camcorders
  • GPS
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
LIB Model for NSR01F30MXnsr01f30mx_rev0.lib0Feb, 2014
SIN Model for NSR01F30MXnsr01f30mx_rev0.sin0Feb, 2014
SP2 Model for NSR01F30MXnsr01f30mx_rev0.sp20Feb, 2014
SP3 Model for NSR01F30MXnsr01f30mx_rev0.sp30Feb, 2014
封装图纸 (1)
Document TitleDocument ID/SizeRevision
X3DFN2, 0.62x0.32, 0.355P, (0201)152AF (23.5kB)A
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Schottky Barrier DiodeNSR01F30MX/D (46kB)4
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSR01F30MXT5GActivePb-free Halide freeX3DFN-2152AF1Tape and Reel10000$0.0467
订购产品技术参数
ProductConfigurationVRRM Min (V)VF Max (V)IRM Max (µA)IO(rec) Max (A)IFSM Max (A)trr Max (ns)Cj Max (pF)
NSR01F30MXT5GSingle300.3550.12-0.9
Schottky Barrier Diode (46kB) NSR01F30MX
LIB Model for NSR01F30MX NSR01F30MX
SIN Model for NSR01F30MX NSR01F30MX
SP2 Model for NSR01F30MX NSR01F30MX
SP3 Model for NSR01F30MX NSR01F30MX
X3DFN2, 0.62x0.32, 0.355P, (0201) ESD8351