NSR05F30NX: 30 V Schottky Diode

The Schottky diode is optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

特性
  • Low Forward Voltage Drop (VF)
优势
  • Better efficiency
应用
  • Reverse Voltage & Current Protection
终端产品
  • Portable/Consumer Products
应用注释 (4)
Document TitleDocument ID/SizeRevisionRevision Date
Board Level Application Note for 0402, 0502 and 0603 DSN2 PackagesAND8464/D (174.0kB)1
Boost Optimized Schottky Diodes for High Frequency Switching Power SuppliesAND9134/D (134.0kB)0
Efficiency Improvements Using DSN2 Schottky DiodesAND9038/D (141.0kB)0
Simple Battery Charger using a CCRAND9031/D (199kB)3
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
NSR05F30NXT DSN (0402) Schottky DiodesNSR05F30/D (85.0kB)3
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NSR05F30NST SP3NSR05F30NXT REV0 SP3 (0.0kB)0
NSR05F30NXT LIBNSR05F30NXT REV0 LIB (0.0kB)0
NSR05F30NXT sinNSR05F30NXT REV0 SIN0Apr, 2010
NSR05F30NXT sp2NSR05F30NXT REV0 SP2 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DSN2 1x0.6, 0.575P (0402)152AC (51.3kB)C
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSR05F30NXT5GActivePb-free Halide freeDSN-2152AC1Die Surf Tape and Reel5000$0.066
订购产品技术参数
ProductConfigurationVRRM Min (V)VF Max (V)IRM Max (µA)IO(rec) Max (A)IFSM Max (A)trr Max (ns)Cj Max (pF)
NSR05F30NXT5GSingle300.43150.510--
NSR05F30NXT DSN (0402) Schottky Diodes (85.0kB) NSR05F30NX
Board Level Application Note for 0402, 0502 and 0603 DSN2 Packages NSR20F30NX
Boost Optimized Schottky Diodes for High Frequency Switching Power Supplies NSR20F40NX
Efficiency Improvements Using DSN2 Schottky Diodes NSR20F30NX
Simple Battery Charger using a CCR NSR20F30NX
NSR05F30NST SP3 NSR05F30NX
NSR05F30NXT LIB NSR05F30NX
NSR05F30NXT sin NSR05F30NX
NSR05F30NXT sp2 NSR05F30NX
DSN2 1x0.6, 0.575P (0402) NSR05F40NX