NSR10F20NX: 20 V Schottky Diode

The Schottky diode is optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.

特性
  • Low Forward Voltage Drop (VF)
优势
  • Better efficiency
应用
  • Reverse Voltage & Current Protection
终端产品
  • Portable/Consumer Product
应用注释 (3)
Document TitleDocument ID/SizeRevisionRevision Date
Board Level Application Note for 0402, 0502 and 0603 DSN2 PackagesAND8464/D (174.0kB)1
Efficiency Improvements Using DSN2 Schottky DiodesAND9038/D (141.0kB)0
Simple Battery Charger using a CCRAND9031/D (199kB)3
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
DSN2 (0502) NSR10F20NXT Schottky diodesNSR10F20/D (86kB)2
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
NSR10F20NXT5G SIN_fileNSR10F20NXT5G SIN_REV0 (0.0kB)0
NSR10F20NXT5G lib_fileNSR10F20NXT5G LIB_REV0 (0.0kB)0
NSR10F20NXT5G sp2_fileNSR10F20NXT5G SP2_REV0 (0.0kB)0
NSR10F20NXT5G sp3_fileNSR10F20NXT5G SP3_REV0 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DSN2, 1.4x0.6, 0.75P152AD (51.1kB)B
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价）
NSR10F20NXT5GActivePb-free Halide freeDSN-2152AD1Die Surf Tape and Reel5000$0.075
订购产品技术参数
ProductConfigurationVRRM Min (V)VF Max (V)IRM Max (µA)IO(rec) Max (A)IFSM Max (A)trr Max (ns)Cj Max (pF)
NSR10F20NXT5GSingle200.4320118--
DSN2 (0502) NSR10F20NXT Schottky diodes (86kB) NSR10F20NX
Board Level Application Note for 0402, 0502 and 0603 DSN2 Packages NSR20F30NX
Efficiency Improvements Using DSN2 Schottky Diodes NSR20F30NX
Simple Battery Charger using a CCR NSR20F30NX
NSR10F20NXT5G SIN_file NSR10F20NX
NSR10F20NXT5G lib_file NSR10F20NX
NSR10F20NXT5G sp2_file NSR10F20NX
NSR10F20NXT5G sp3_file NSR10F20NX
DSN2, 1.4x0.6, 0.75P NSR10F40NX
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