NSS12500UW3: Low VCE(sat) Transistor, PNP, 12 V, 8.0 A

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
优势
  • Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
培训教材 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT)TND404/D (10341.0kB)0Aug, 2010
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNSS12500UW3T2G.LIB (0.0kB)1
Saber ModelNSS12500UW3T2G.SIN (1.0kB)1
Spice2 ModelNSS12500UW3T2G.SP2 (0.0kB)1
Spice3 ModelNSS12500UW3T2G.SP3 (0.0kB)1
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Simple Battery Charger using a CCRAND9031/D (199kB)3
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Low VCE(sat) Transistor, PNP, 12 V, 8.0 ANSS12500UW3/D (108.0kB)1
封装图纸 (1)
Document TitleDocument ID/SizeRevision
WDFN3 2x2x0.75 mm, 1.3 mm Pitch506AU (29.6kB)A
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NSS12500UW3T2GActiveAEC Qualified Pb-free Halide freeWDFN-3506AU1Tape and Reel3000$0.2933
订购产品技术参数
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
NSS12500UW3T2GPNPLow VCE(sat)0.26512250-1001.5
Low VCE(sat) Transistor, PNP, 12 V, 8.0 A (108.0kB) NSS12500UW3
Power Saving Alternatives Using Low VCE(sat) BJTs (VoPPT) NSS60601MZ4
PSpice Model NSS12500UW3
Saber Model NSS12500UW3
Spice2 Model NSS12500UW3
Spice3 Model NSS12500UW3
Simple Battery Charger using a CCR NSR20F30NX
WDFN3 2x2x0.75 mm, 1.3 mm Pitch NSS40501UW3