NTLUD3A50PZ: Power MOSFET -20V -5.6A 50 mOhm Dual P-Channel uDFN6 with ESD Protection _ BDTIC 中国领先电子元器件代理商

NTLUD3A50PZ: Power MOSFET -20V -5.6A 50 mOhm Dual P-Channel uDFN6 with ESD Protection

Power MOSFET, -20 V, -5.6 A, Dual P-Channel, 2.0x2.0x0.55 mm UDFN Package

特性

UDFN Package with Exposed Drain Pads
Low RDS(on)
Low Profile UDFN 2.0x2.0x0.55 mm package

优势

Excellent ThermalConduction
Efficiency Improvement
Board Space Savings

应用

High Side Load Switch
Reverse Current Protection
Battery Switch
Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others

终端产品

Portable Products, such as Cell Phones, PMP, DSC, GPS, and others

封装

NTLUD3A50PZ 封装

应用注释 (1)

Document Title	Document ID/Size	Revision	Revision Date
Using MOSFETs in Load Switch Applications	AND9093/D (344kB)	1	Feb, 2014

封装图纸 (1)

Document Title	Document ID/Size	Revision
UDFN6 2X2, 0.65P	517BF (60.9kB)	B

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET, Dual P-Channel, -20 V, -5.6 A, 2.0x2.0x0.55 mm UDFN Package	NTLUD3A50PZ/D (127kB)	2

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NTLUD3A50PZTAG	Active	Pb-free Halide free	UDFN-6	517BF	1	Tape and Reel	3000	$0.3333
NTLUD3A50PZTBG	Active	Pb-free Halide free	UDFN-6	517BF	1	Tape and Reel	3000	$0.3333

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NTLUD3A50PZTAG	P-Channel	Dual	20	8	1	4.4	1.4	70	50		10.4		3		920	85	80
NTLUD3A50PZTBG	P-Channel	Dual	20	8	1	4.4	1.4	70	50		10.4		3		920	85	80

Power MOSFET, Dual P-Channel, -20 V, -5.6 A, 2.0x2.0x0.55 mm UDFN Package (127kB) NTLUD3A50PZ

Using MOSFETs in Load Switch Applications NTUD3170NZ

UDFN6 2X2, 0.65P NTLUD3C20CZ

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