NVD5805N: Power MOSFET 40V, 51A, 9.5 mOhm, Single N-Channel, DPAK. _ BDTIC 中国领先电子元器件代理商

NVD5805N: Power MOSFET 40V, 51A, 9.5 mOhm, Single N-Channel, DPAK.

Automotive Power MOSFET. 40V, 51A, 9.5 mOhm, Single N-Channel, DPAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性

Low RDS(on)
High Current Capability
Avalanche Energy Specified
Pb-Free

应用

LED Backlight Driver
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification

应用注释 (1)

Document Title	Document ID/Size	Revision	Revision Date
MOSFET Gate-Charge Origin and its Applications	AND9083/D (193kB)	2	Feb, 2016

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Power MOSFET, 40 V, 51 A, Single N-Channel, DPAK	NTD5805N/D (98kB)	5	Aug, 2014

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice Model	NTD5805NT4G.LIB (1.0kB)	0
Saber Model	NTD5805NT4G.SIN (2.0kB)	0
Spice2 Model	NTD5805NT4G.SP2 (2.0kB)	0
Spice3 Model	NTD5805NT4G.SP3 (2.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
DPAK 4 LEAD Single Gauge Surface Mount	369AA (62.3kB)	B

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
NVD5805NT4G	Active	AEC Qualified PPAP Capable Pb-free Halide free	DPAK-3	369AA	1	Tape and Reel	2500	$0.2484

订购产品技术参数

Product	Channel Polarity	Configuration	V(BR)DSS Min (V)	VGS Max (V)	VGS(th) Max (V)	ID Max (A)	PD Max (W)	RDS(on) Max @ VGS = 2.5 V (mΩ)	RDS(on) Max @ VGS = 4.5 V (mΩ)	RDS(on) Max @ VGS = 10 V (mΩ)	Qg Typ @ VGS = 4.5 V (nC)	Qg Typ @ VGS = 10 V (nC)	Qgd Typ @ VGS = 4.5 V (nC)	Qrr Typ (nC)	Ciss Typ (pF)	Coss Typ (pF)	Crss Typ (pF)
NVD5805NT4G	N-Channel	Single	40	20	3.5	51	47		16	9.5		33	9.8	15.5	1725	220	160

Power MOSFET, 40 V, 51 A, Single N-Channel, DPAK (98kB) NVD5805N

MOSFET Gate-Charge Origin and its Applications NVD5805N

PSpice Model NVD5805N

Saber Model NVD5805N

Spice2 Model NVD5805N

Spice3 Model NVD5805N

DPAK 4 LEAD Single Gauge Surface Mount NVD6824NL

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