NVMD4N03: Power MOSFET 30V, 4A, 60 mOhm, Dual N-Channel, S0-8, Logic Level.

Automotive Power MOSFET. 30V, 4A, 60 mOhm, Dual N-Channel, S0-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Designed for use in low voltage, high speed switching applications
  • Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life
  • Miniature SO-8 Surface Mount Package - Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • Pb-Free Package is Available
封装
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
P Spice ModelNTMD4N03R.LIB (1.0kB)0
Saber ModelNTMD4N03R.SIN (1.0kB)0
Spice 2 ModelNTMD4N03R.SP2 (1.0kB)0
Spice 3 ModelNTMD4N03R.SP3 (1.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
SOIC-8 Narrow Body751-07 (62.6kB)AK
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 DualNTMD4N03R2/D (120.0kB)4
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NVMD4N03R2GActiveAEC Qualified PPAP Capable Pb-free Halide freeSOIC-8751-071Tape and Reel2500$0.3388
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVMD4N03R2GN-ChannelDual3020342806080.0082859535
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual (120.0kB) NVMD4N03
P Spice Model NVMD4N03
Saber Model NVMD4N03
Spice 2 Model NVMD4N03
Spice 3 Model NVMD4N03
SOIC-8 Narrow Body CM1216