VEC2315: Power MOSFET, -60V, 137mΩ, -2.5A, Dual P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
特性- Low-Profile Package
- ESD Diode-Protected Gate
- Pb-Free, Halogen Free and RoHS compliance
- Low On-Resistance
- 4V drive
| 优势- Board Space Saving
- ESD Resistance
- Environmental Consideration
- Improves Efficiency by Reducing Conduction Losses,Reduces Heat Dissipation
|
应用 | 终端产品- Fan Motor, Fan Motor for MFP
|
仿真模型 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| VEC2315-TL-H | Active, Not Rec | Pb-free
Halide free | SOT-28FL / VEC-8 | 318AH | 1 | Tape and Reel | 3000 | $0.2933 |
| VEC2315-TL-W | Active | Pb-free
Halide free | SOT-28FL / VEC-8 | 318AH | 1 | Tape and Reel | 3000 | $0.24 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| VEC2315-TL-W | P-Channel | Dual | -60 | 20 | -2.6 | -2.5 | 0.9 | | 180 | 137 | | 11 | 2 | | 420 | 54 | 44 |
