电界効果晶体管的MOSFET。提供通过采用新流程的「针对开关电源的高効率高耐圧设备」而实现节能的功率MOSFET、有着丰富的产品线可以对应各种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS数据手册
R4008ANDTLActiveCPT325002500TapingYesR4008AND
技术特性
GradeStandard
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]400
Drain Current ID[A]8.0
RDS(on)[Ω] VGS=10V (Typ.)0.73
RDS(on)[Ω] VGS=Drive (Typ.)0.73
Total gate charge Qg[nC]15.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]10.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • Portable Data Terminal
  • Digital Multimeter: Handy Type
  • 智能电表
  • STB (Set Top Box)
  • Network Attached Storage
  • DVR/DVS
  • PPC (Plain Paper Copier)
  • 大型LCD面板
  • Electric Bike
  • 太阳能发电逆变器
  • 家庭音响
  • X-ray Inspection Machine for Security
  • 监控摄像机
  • MFP (多功能打印机)
  • Intercom / Baby Monitor
  • Fingerprint Authentication Device
  • 家庭影院
  • LED 照明
  • Display for EMS
  • 监控摄像机(IP网络)
  • TV
技术支持资料下载
产品特点
  • 10V驱动型 Nch 功率MOSFET
引脚配置图
10V Drive Nch MOSFET - R4008AND R4008AND
Spice Model (lib) R4008AND
Thermal Model (lib) R4008AND
Package Information VT6M1
Part Explanation VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RSD221N06
Operation Notes VT6M1
Operation Notes VT6M1
NE Handbook Series ZDX100N60