用于镍镉电池/镍氢电池、开关模式、高达 6A 的 BQ2003 评估模块

  DV2003S2
名称 BQ2003 Evaluation Module for NiCd/NiMH, switchmode, up to 6A
状态 ACTIVE
价格(US$)  
DV2003S2 描述

The DV2003S2 Development System provides a development environment for the bq2003 Fast-Charge IC. The DV2003S2 incorporates a bq2003 and an n-FET buck-type switch-mode regulator to provide fast charge control for 2 to 16 NiCd or NiMH cells. The primary difference between the DV2003S2 and the DV2003S1 is in the switching FET Q1. The DV2003S1 uses a P-FET for battery charge currents of 3.0A or less, whereas the DV2003S2 uses an N-FET to support charge currents up to 6.0A. Review the bq2003 data sheet and the application note,"Using the bq2003 to Control Fast Charge," before using the DV2003S2 board. Also review the application note, "Step-Down Switching Current Regulation Using the bq2003," for information concerning trade-offs between using P-FET and N-FET transistors for Q1. The fast charge is terminated by any of the following: DT/Dt, -DV, maximum temperature, maximum time, maximum voltage, or an external inhibit command. Jumper settings select the -DV enabled state, and the hold-off, top-off, and maximum time limits. The user provides a power supply and batteries. The user configures the DV2003S2 for the number of cells,-DV charge termination, and maximum charge time (with or without top-off), and commands the discharge-before-charge option with the push-button switch S1

DV2003S2 特性
DV2003S2 应用技术支持与电子电路设计开发资源下载
  1. TI 德州仪器电池管理产品选型与价格 . xls
DV2003S2 相关产品
器件型号 名称 产品系列
BQ2003 具有负 dV 和 dT/dt 终端的镍镉电池/镍氢电池开关模式充电管理 IC 电池管理