AT28BV64B 64Kbit,并行EEPROMs存储器

Density 64K
Organization 8K x 8
Speed 200 ns
Vcc (V) 2.7-3.6
Packages PDIP 28
PLCC 32
SOIC (300mil)
TSOP 28
Pb-Free
Packages
PLCC 32
SOIC (300mil)
TSOP 28

64K EEPROM with 64-Byte Page Software Protection, 2.7-Volt

The AT28BV64B is a high-performance electrically erasable programmable read onlymemory(EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 μA.

The AT28BV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64 byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin. Atmel’s AT28BV64B has additional features to ensure high quality and manufacturability. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

AT28BV64B 特征
AT28BV64B 订购型号
tACC (ns) ICC (mA) Ordering Code Package Operation Range
Active AStandby
200 15 0.02 AT28BV64B-20JU
AT28BV64B-20TU
AT28BV64B-20SU
32J
28T
28S
Industrial
(-40° to 85°C)
AT28BV64B 应用技术支持与电子电路设计开发资源下载
  1. ATMEL 爱特梅尔EEPROM存储器AT28BV64B 数据手册DataSheet 下载. PDF(完整版)
  2. 并行EEPROM 存储器参数选型指南(Excel 文档格式)
  3. EEPROM 存储器参数选型指南
  4. 中文版 ATMEL 汽车应用解决方案 . pdf
  5. 英文版 ATMEL 汽车应用解决方案 . pdf
  6. 嵌入式系统中EEPROM文件系统的设计与实现 . PDF
  7. ATMEL 爱特梅尔公司全线产品目录. pdf