AT49BV160S 16Mbit,
| Density | 16M |
| Organization | 1M x 16 |
| Speed | 70 ns |
| Vcc (V) | 2.7V - 3.6V |
| Pb-Free Packages |
CBGA 64 (8x8) |
16-Mbit (1M x 16), Secure 3-volt Only Memory, Bottom Boot Block.
The AT49BV160D(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see “Flexible Sector Protection” on page 6). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 10.0V, the program (Dual-word Program Command) operation is accelerated.
| Devices | Package |
| AT49BV160S AT49BV160ST |
CBGA 64 (8x8) |
AT49BV160S 特性
- Single Voltage Read/Write Operation: 2.65V to 3.6V
- Access Time – 70 ns
- Sector Erase Architecture
– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout - Fast Word Program Time – 10 μs
- Fast Sector Erase Time – 100 ms
- Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word - Low-power Operation
– 10 mA Active
– 15 μA Standby - VPP Pin for Write Protection and Accelerated Program Operation
- WP Pin for Sector Protection
- RESET Input for Device Initialization
- Flexible Sector Protection
- TSOP Package
- Top or Bottom Boot Block Configuration Available
- 128-bit Protection Register
- Minimum 100,000 Erase Cycles
- Common Flash Interface (CFI)
- Green (Pb/Halide-free) Packaging
AT49BV160S 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT49BV160S 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf
