HMC-APH478 1 Watt Power Amplifier Chip, 18 - 20 GHz
The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 18 and 20 GHz. The HMC-APH478 provides 17.5 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-APH478 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
技术特性
- Output IP3: +38.5 dBm
- P1dB: +30 dBm
- Gain: 17.5 dB
- Supply Voltage: +5V
- 50 Ohm Matched Input/Output
- Die Size: 3.92 x 1.28 x 0.1 mm
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
订购信息 Ordering Information
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 18 - 20 |
Power Amplifier, 1 Watt |
17.5 |
38.5 |
- |
30 |
+5V @ 900mA |
Chip |
功能框图 Functional Block Diagram
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