HMC-XDB112 x2 Passive Frequency Multiplier Chip, 20 - 30 GHz Output

The HMC-XDB112 is a monolithic Passive Frequency Doubler which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology, and is targeted to high volume applications where frequency doubling of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the HBT devices are fully passivated for reliable operation. The HMC-XDB112 Passive Doubler MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

技术特性
  • Conversion Loss: 13 dB
  • Passive: No DC Bias Required
  • Input Drive: +13 dBm
  • High Fo Isolation: 30 dB
  • Die Size: 2.2 x 0.65 x 0.1 mm
应用领域 APPLICATION
  • Point-to-Point Radios
  • VSAT
  • Test Instrumentation
  • Military & Space
  • Clock Generation
技术指标
Input Freq. (GHz) Function Output Freq. (GHz) Conv. Loss (dB) 1Fo / 4Fo Isolation (dB) Input Drive (dBm) Package
10 - 15 x2 Passive 20 - 30 13 30 13 Chip
订购信息 Ordering Information
  • HMC-XDB112
功能框图 Functional Block Diagram

HMC-XDB112 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC-XDB112 数据资料DataSheet下载:pdf Rev.V2 2 页