HMC233G8 GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6 GHz
The HMC233G8(E) is a broadband high isolation non-refl ective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 12 GHz, the switch features >60 dB isolation up to 3 GHz and >42 dB isolation up to 12 GHz. Input P1dB compression is +27 dBm typical, while input IP3 is +50 dBm. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.
技术特性
- Isolation: 60 dB @ 3 GHz
52 dB @ 6 GHz
- Input P1dB: +27 dBm
- Insertion Loss: 1.5 dB Typical @ 6 GHz
- Non-Refl ective Design
- 24 Lead 4x4mm QFN Package: 16mm2
- Included in the HMC-DK005 Designer’s Kit
订购信息 Ordering Information
应用领域 APPLICATION
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military Radios, Radar & ECM
- Space Systems
- Test Instrumentation
|
技术指标
| Data Rate (Gbps) |
Function |
Number of Taps |
Input Sensitivity (mVpp) |
Tap Delay (ps) |
Total Harmonic Distortion (%) |
Package |
| 32 |
Advanced Linear Equalizer |
9 |
20 |
18 |
5 |
LP5 |
功能框图 Functional Block Diagram
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