HMC349MS8G Hi Isolation SPDT Switch SMT, DC - 4 GHz

The HMC349MS8G & HMC349MS8GE are high isolation non-refl ective DC to 4 GHz GaAs MESFET SPDT switches in low cost leadless surface mount packages. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB iso-lation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state.

技术特性
  • High Isolation: 67 dB @ 1 GHz
    62 dB @ 2 GHz
  • Single Positive Control: 0/+5V
  • +52 dBm Input IP3
  • Non-Refl ective Design
  • All Off State
  • 16 mm2 Leadless QFN SMT Package
订购信息 Ordering Information
  • HMC349MS8G
应用领域 APPLICATION
  • Basestation Infrastructure
  • MMDS & 3.5 GHz WLL
  • CATV/CMTS
  • Test Instrumentation
技术指标
Freq. (GHz) Function Insertion Loss (dB) Isolation (dB) IP1dB (dBm) Control Input (Vdc) Package
DC - 4 SPDT, Hi Isolation 0.9 65 31 0/ +5V LP4C
功能框图 Functional Block Diagram

HMC349MS8G 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC349MS8G 数据资料DataSheet下载:pdf Rev.V2 2 页