HMC406MS8G InGaP HBT Power Amplifier SMT, 5 - 6 GHz
The HMC406MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 6 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5V supply voltage. Vpd can be used for full power down or RF output power/current control.
技术特性
- Gain: 17 dB
- Saturated Power: +29 dBm
- 38% PAE
- Supply Voltage: +5V
- Power Down Capability
- Low External Part Count
应用领域 APPLICATION
- UNII
- HiperLAN & 802.11a WLAN
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 5 - 6 |
Medium Power Amplifier |
18 |
38 |
6 |
26 |
+5V @ 300mA |
MS8G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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