HMC407MS8G InGaP HBT Power Amplifier SMT, 5 - 7 GHz
The HMC407MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
技术特性
- Gain: 15 dB
- Saturated Power: +29 dBm
- 28% PAE
- Supply Voltage: +5V
- Power Down Capability
- No External Matching Required
应用领域 APPLICATION
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技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 5 - 7 |
Medium Power Amplifier |
15 |
40 |
5.5 |
25 |
+5V @ 230mA |
MS8G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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