HMC414MS8G InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz
The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
技术特性
- Gain: 20 dB
- Saturated Power: +30 dBm
- 32% PAE
- Supply Voltage: +2.75V to +5V
- Power Down Capability
- Low External Part Count
应用领域 APPLICATION
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 2.2 - 2.8 |
Power Amplifier, 1/2 Watt |
20 |
39 |
7 |
27 |
+5V @ 300mA |
MS8G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
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