HMC457QS16G 1 Watt Power Amplifier SMT, 1.7 - 2.2 GHz
The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications.
技术特性
- Output IP3: +46 dBm
- Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
- +25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
- Integrated Power Control (Vpd)
- QSOP16G SMT Package: 29.4 mm²
- Included in the
HMC-DK002 Designer’s Kit
应用领域 APPLICATION
- CDMA & W-CDMA
- GSM, GPRS & Edge
- Base Stations & Repeaters
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 1.7 - 2.2 |
Power Amplifier, 1 Watt |
27 |
46 |
5 |
30.5 |
+5V @ 500mA |
QS16G |
订购信息 Ordering Information
功能框图 Functional Block Diagram
|
