HMC757LP4E 1/2 Watt Power Amplifier SMT, 16 - 24 GHz
The HMC757LP4E is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757LP4E provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip- Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils).
技术特性
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Saturated Output Power:
27.5 dBm @ 21% PAE
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High Output IP3: 34.5 dBm
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High Gain: 20.5 dB
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DC Supply: +5V @ 400 mA
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No External Matching Required
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32 Lead 5x5 mm SMT Package: 25 mm²
订购信息 Ordering Information
应用领域 APPLICATION
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- VSAT
- Military & Space
|
技术指标
| Freq. (GHz) |
Function |
Gain (dB) |
OIP3 (dBm) |
NF (dB) |
P1dB (dBm) |
Bias Supply |
Package |
| 16 - 24 |
Power Amplifier, 1/2 Watt |
20.5 |
34.5 |
- |
26.5 |
+5V @ 400mA |
LP4 |
功能框图 Functional Block Diagram
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