HMC995LP5GE 3 Watt Power Amplifier SMT, 12 - 16 GHz

The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC 3 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 GHz. The HMC995LP5GE provides 27 dB of gain, 35.5 dBm of saturated output power, and 24% PAE from a +7V supply. The HMC995LP5GE exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC995LP5GE amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components.

技术特性
  • Saturated Output Power:
        35.5 dBm @ 24% PAE
  • High Output IP3: 41 dBm
  • High Gain: 27 dB
  • DC Supply: +7V @ 1200 mA
  • No External Matching Required
订购信息 Ordering Information
  • HMC995LP5GE
应用领域 APPLICATION
  • Point-to-Point Radios

  • Point-to-Multi-Point Radios

  • VSAT & SATCOM

  • Military & Space


技术指标
Freq. (GHz) Function Gain (dB) OIP3 (dBm) NF (dB) P1dB (dBm) Bias Supply Package
12 - 16 3 Watt Power Amplifier
w/ Power Detector
27 41 - 34.5 +7V @
1200 mA
LP5G
功能框图 Functional Block Diagram

HMC995LP5GE 功能框图

应用技术支持与电子电路设计开发资源下载 版本信息 大小
HMC995LP5GE 数据资料DataSheet下载:pdf Rev.V2 2 页