M/A-COM’s MA4AGSW8-2 is an Aluminum-Gallium- Arsenide (AlGaAs) anode enhanced, SP8T, PIN diode switch. Operation is accomplished with 10 mA applied to the low loss port and 0V for the isolated ports. M/A-COM’s Technology Solutions AlGaAs process utilizes a patented hetero-junction technology which produces lower insertion loss than conventional GaAs devices. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes used have low resistance, (3 Ω) , low capacitance (20 fF) , and fast switching speed (20 nS). The MA4AGSW8-2 device is fully passivated with silicon nitride, and has an extra layer of polyamide for added scratch and impact protection. This protective coating prevents damage to the diode junction and anode air bridges during handling and assembly. External RF to DC bias networks which are optimized for the particular operating band of interest are required.
技术特性 Features
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应用领域 APPLICATIONSThe low capacitance of the internal PIN diodes makes this switch ideal for use in many microwave multi-throw switch designs. The low resistance of the diodes reduces the insertion loss at microwave millimeter-wave frequencies. These AlGaAs PIN switches can be used as switching arrays on radar systems, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. 订购信息 Ordering Information
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MA4AGSW8-2 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
| MA4AGSW8-2:S 参数 | 21K |
