MA4E1317 GaAs Flip Chip Schottky Barrier Diode
M/A-COM's MA4E1317 single, MA4E1318 antiparallel pair, MA4E1319-1 reverse tee, MA4E1319-2 tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.
技术特性 Features
- Low Resistance
- Low Capacitance
- High Cutoff Frequency
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- Designed for Easy Circuit Insertion
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订购信息 Ordering Information
- MA4E1317 Die in Carrier 100
- MADS-001317-1278HP Pocket Tape on Reel 3000
- MA4E1318 Wafer on Frame 100
- MADS-001318-1197HP Pocket Tape on Reel 3000
- MA4E1319-1 Die in Carrier 100
- MA4E1319-2 Die in Carrier 100
- MA4E2160 Die in Carrier 100
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