MA4E2513L-1289 SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes

The MA4E2513L-1289 SURMOUNTTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The extremely small “0301” outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2513L-1289 SURMOUNTTM Diode is recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a hard or soft substrate circuit with solder.

技术特性 Features
  • Extremely Low Parasitic Capitance and Inductance
  • Extremely Small “0301” (1000 x 300 um) Footprint
  • Surface Mountable in Microwave Circuits, No Wirebonds Required
  • Rugged HMIC Construction with Polyimide Scratch Protection
  • Reliable, Multilayer Metalization with a Diffusion Barrier,100 % Stabilization Bake (300°C, 16 hours)
  • Lower Susceptibility to ESD Damage
订购信息 Ordering Information
  • MA4E2513L-1289W Wafer on Frame
  • MA4E2513L-1289 Die in Carrier

应用技术支持与电子电路设计开发资源下载 版本信息 大小
MA4E2513L-1289 数据资料DataSheet下载:PDF Rev.V2 2 页