The MA4SW610B-1 is a reflective SP6T shunt broad band switch with integrated bias networks made with M/A-COM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz.
技术特性 Features
订购信息 Ordering Information
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应用领域 ApplicationsThese high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80ns switching speeds are achieved. |
| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| MA4SW610B-1 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
| MA4SW610B-1:S 参数 | 22K |
