XF1001-SC DC-6.0 GHz1.0W Packaged HFETPage
The XF1001-SC is a high linearity Hetrojunction Field Effect Transistor (HFET) housed in an industry standard SOT-89 package. Optimum performance is achieved when the device is biased at a drain voltage of 8V and drain current of 300m. At this bias point, the device is capable of more than 30 dBm of P1dB and OIP3 of more than 46 dBm. The XF1001-SC is suitable for applications up to 6 GHz where it has 10 dB of gain.
技术特性 Features
订购信息 Ordering Information
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功能框图 Functional Block Diagram
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| 应用技术支持与电子电路设计开发资源下载 | 版本信息 | 大小 |
| XF1001-SC 数据资料DataSheet下载：PDF | Rev.V2 | 2 页 |
| XF1001-SC:S 参数 | 122K |
