MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET

The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

技术特性 Features
  • Class AB operation
  • Internally matched to 50(ohm) system
  • High output power
    P1dB = 47dBm (TYP.) @ f=5.8 ~ 6.4 GHz
  • High power gain
    GLP = 9.5 dB (TYP.) @ f=5.8 ~ 6.4GHz
  • High power added efficiency
    PAE = 35 % (TYP.) @ f=5.8 ~ 6.4GHz
应用领域 APPLICATION

Solid-state power amplifier for satellite earth-station communication transmitter and VSAT

订购信息 Ordering Information
  • MGFC47V5864
外观尺寸图 Outline Drawing

MGFC47V5864 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
MGFC47V5864 数据资料DataSheet下载:PDF Rev.V2 2 页