技术特性 Features

• High power gain:
  Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
  
• High Efficiency: 50%min. (520MHz)
  
• Integrated gate protection diode

应用领域 APPLICATION

For output stage of high power amplifiers in UHF band mobile radio sets.

订购信息 Ordering Information

• RD09MUP2

外观尺寸图 Outline Drawing