RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

技术特性 Features
  • High Power Gain:
    Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
  • High Efficiency: 57%typ. (175MHz)
应用领域 APPLICATION

For output stage of high power amplifiers in VHF band mobile radio sets.

订购信息 Ordering Information
  • RD12MVS1
外观尺寸图 Outline Drawing

RD12MVS1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD12MVS1 数据资料DataSheet下载:PDF Rev.V2 2 页