RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W

RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

技术特性 Features
  • High power gain:
    Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz
  • High Efficiency: 60%typ.
应用领域 APPLICATION

For output stage of high power amplifiers in VHF band Mobile radio sets.

订购信息 Ordering Information
  • RD30HVF1
外观尺寸图 Outline Drawing

RD30HVF1 外观尺寸图


应用技术支持与电子电路设计开发资源下载 版本信息 大小
RD30HVF1 数据资料DataSheet下载:PDF Rev.V2 2 页