FPD3000 2W Power pHEMT

The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx3000μm Schottky barrier gate defined by high - resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD3000 is also available in the low-cost plastic SOT89 package.

技术特性 Features
  • 32.5dBm Linear Output Power at 12GHz
  • 6.5dB Power Gain at 12GHz
  • 8dB Max Stable Gain at 12GHz
  • 42dBm OIP3
  • 30% Power-Added Efficiency
应用领域 Applications
  • Narrowband and Broadband High-Performance Amplifiers
  • SATCOM Uplink Transmitters
  • PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
  • Medium-Haul Digital Radio Transmitters
Frequency Range (Min) (MHz): 1000
Frequency Range (Max) (MHz): 15000
Gain (dB): 6.5
OP1dB (dBm): 32.5
OIP3 (dBm): 42
ISUPPLY (mA): 400
Package: Die
订购信息 Ordering Information
  • Full Pack (100) FPD3000-000
  • Small Quantity (25) FPD3000-000SQ
  • Sample Quantity (3) FPD3000-000S3
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD3000-000SQ 25 EA 25 EA Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe 1+ $36.53
FPD3000-000 100 EA 100 EA Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe 100+ $25.53
        750+ $17.76

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD3000 数据资料DataSheet下载:FPD3000 2W Power pHEMT 239 Rev A1 DS090612