FPD6836 0.25W Power Die

The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) featuring a 0.25μmx360μm Schottky barrier gate defined by high - resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.

技术特性 Features
  • 25.5dBm Output Power (P1dB)
  • 10dB Power Gain at 12GHz
  • 16.5dB Max Stable Gain at 12GHz
  • 12dB Maximum Stable Gain at 24GHz
  • 50% Power-Added Efficiency
  • 8V Operation
应用领域 Applications
  • Narrowband and Broadband High-Performance Amplifiers
  • SATCOM Uplink Transmitters
  • PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
  • Medium-Haul Digital Radio Transmitters
Frequency Range (Min) (MHz): 1000
Frequency Range (Max) (MHz): 24000
Gain (dB): 16.5
OP1dB (dBm): 25.5
ISUPPLY (mA): 55
Package: Die
订购信息 Ordering Information
  • Full Pack (100) FPD6836-000
  • Small Quantity (25) FPD6836-000SQ
  • Sample Quantity (3) FPD6836-000S3
订购信息 Ordering Information
订购型号 MOQ*             INC*             Packaging and Shipping Details QTY Per 1 EA
FPD6836-000SQ 25 EA 25 EA Standard 25 Piece Waffle Pack Shipping From Newton Aycliffe 1+ $12.73
FPD6836-000 100 EA 100 EA Standard 100 Piece Waffle Pack Shipping From Newton Aycliffe 100+ $8.90
        750+ $6.19

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
FPD6836 数据资料DataSheet下载:FPD6836 0.25W Power Die 238 Rev A1 DS090612