SPA2318Z 1W GaAs Amplifier

RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.

技术特性 Features
  • Now Available in Lead-Free, RoHS Compliant, and Green Packaging
  • High Linearity Performance:
    +21dBm IS-95 Channel Power at -55dBc ACP;
    +20.7dBm WCDMA Channel Power at -50dBc ACP;
    +47dBm Typ. OIP3
  • On-Chip Active Bias Control
  • High Gain: 24dB Typ. at 1960MHz
  • Patented High Reliability GaAs HBT Technology
  • Surface-Mountable Plastic Package
SPA2318Z 产品实物图

SPA2318Z 产品实物图

功能框图 Functional Block Diagram

RF2377 功能框图

技术指标
Frequency Range (Min) (MHz): 1700
Frequency Range (Max) (MHz): 2200
Gain (dB): 23.5
NF (dB): 5.5
OP1dB (dBm): 29.5
OIP3 (dBm): 47
VSUPPLY (V): 5
ISUPPLY (mA): 400
Package: SOIC-8
应用领域 Applications
  • WCDMA Systems
  • PCS Systems
  • Multi-Carrier Applications
订购信息 Ordering Information
  • SPA2318Z 7” Reel with 500 pieces
  • SPA2318ZSQ Sample bag with 25 pieces
  • SPA2318ZSR 7” Reel with 100 pieces
  • SPA2318Z-EVB1 1960MHz PCBA
  • SPA2318Z-EVB2 2140MHz PCBA

应用技术支持与电子电路设计开发资源下载 大小(KB) 版本信息
SPA2318Z 数据资料DataSheet下载:PDF 725 DS120502