SXA-3318B(Z) 0.5W GaAs Amplifier - Balanced
The SXA-3318B is a high performance high efficiency 400-2500 MHz 1/2 Watt Medium Power GaAs Heterojunction Bipolar Transistor (HBT) amplifier with active bias. It is housed in a low-cost surface mountable plastic package. These HBT MMIC's are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance. These amplifiers are specifically designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular ISM WLL PCS and W-CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
技术特性 Features
- On-Chip Active Bias Control
- High OIP3: +47.0dBm typ.
- High P1dB: +28.0dBm typ.
- High Gain: +17.5dB at 850MHz
- Patented High Reliabilty GaAs HBT Technology
- Lower Thermal Resistance for Increased MTTF
订购信息 Ordering Information
- SXA-3318B 7” 500
- SXA-3318BZ 7” 500
产品实物图
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技术指标
| Frequency Range (Min) (MHz): |
400 |
| Frequency Range (Max) (MHz): |
2500 |
| Gain (dB): |
17.5 |
| NF (dB): |
5.1 |
| OP1dB (dBm): |
28 |
| OIP3 (dBm): |
47 |
| VSUPPLY (V): |
5 |
| ISUPPLY (mA): |
240 |
| Package: |
SOIC-8 |
应用领域 Applications
- W-CDMA, PCS, Cellular Systems
- High Linearity IF Amplifiers
- Multi-Carrier Applications
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