AT28C040 4Mbit,并行EEPROMs存储器

Density 4M
Organization 512K x 8
Speed 200 ns
Vcc (V) 4.5-5.5
Packages  FLAT PACK 32
LCC 44
 TSOP 48

4M bit EEPROM with 128-Byte Page Software Data Protection

The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW.

The AT28C040 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 256-byte page register to allow writing of up to 256 bytes simultaneously. During a write cycle, the address and 1 to 256 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by Data Polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. Atmel's AT28C040 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 256 bytes of EEPROM for device identification or tracking.

AT28C040 特征
AT28C040 订购型号
tACC (ns) ICC (mA) Ordering Code Package Operation Range
Active AStandby
200 50 AT28C040-20FI 32F Industrial
(-40° to 85°C)
AT28C040-20LI 44L
50
AT28BC040 应用技术支持与电子电路设计开发资源下载
  1. ATMEL 爱特梅尔EEPROM存储器AT28C040 数据手册DataSheet 下载. PDF(完整版)
  2. 并行EEPROM 存储器参数选型指南(Excel 文档格式)
  3. EEPROM 存储器参数选型指南
  4. 中文版 ATMEL 汽车应用解决方案 . pdf
  5. 英文版 ATMEL 汽车应用解决方案 . pdf
  6. 嵌入式系统中EEPROM文件系统的设计与实现 . PDF
  7. ATMEL 爱特梅尔公司全线产品目录. pdf
  8. AT28C040 Reliability Qualification Report (Qualification, 10 pages, updated 10/06) . PDF