IRFS31N20D

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRFS31N20D
PackageD2PAK (TO-263)
VDS  max200.0V
RDS (on)  max82.0mΩ
RDS (on) (@10V)  max82.0mΩ
PolarityN
ID (@ TC=100°C)  max22.0A
ID  max22.0A
ID (@ TC=25°C)  max31.0A
Ptot  max200.0W
QG70.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd33.0nC
Tj  max175.0°C
RthJC  max0.75K/W
VGS  max30.0V
Sales Product NameIRFS31N20D
OPNIRFS31N20DPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
OPNIRFS31N20DTRLP
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
OPNIRFS31N20DTRRP
Product Statusdiscontinued
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL RIGHT
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB31N20D,EN291 KB03 八月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFBSL31N20DEN2 KB18 六月 2001
Saber Model - IRFBSL31N20DEN2 KB18 六月 2001
EN IRFB31N20D
EN IDV20E65D1
EN IRFB31N20D
EN IRFB31N20D