IRFS31N20D

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRFS31N20D
PackageD2PAK (TO-263)
VDS  max200.0V
RDS (on)  max82.0mΩ
RDS (on) (@10V)  max82.0mΩ
PolarityN
ID (@ TC=100°C)  max22.0A
ID  max22.0A
ID (@ TC=25°C)  max31.0A
Ptot  max200.0W
QG70.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd33.0nC
Tj  max175.0°C
RthJC  max0.75K/W
VGS  max30.0V
Sales Product NameIRFS31N20D
OPNIRFS31N20DTRLP
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
OPNIRFS31N20DTRRP
Product Statusdiscontinued
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL RIGHT
Moisture Level1
OPNIRFS31N20DPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB31N20D,EN291 KB03 Aug 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFBSL31N20DEN2 KB18 Jun 2001
Saber Model - IRFBSL31N20DEN2 KB18 Jun 2001
EN IRFB31N20D
EN IDV20E65D1
EN IRFB31N20D
EN IRFB31N20D