NGTB40N120FL3: Ultra Field Stop IGBT -1200V 40A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides superior
performance in demanding switching applications, offering both low on
state voltage and minimal switching loss. The IGBT is well suited for
UPS and solar applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
特性- Extremely Efficient Trench with Ultra Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- These are Pb−Free Devices
|
应用- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
| 终端产品 |
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB40N120FL3WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | 联系BDTIC |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB40N120FL3WG | 1200 | 40 | 1.7 | 3 | 1.1 | 1.6 | 86 | 12 | 212 | | | 454 | Yes |
